We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

We review the fundamental band gaps of wurtzite InN and group III nitride ternary alloys in
the light of the recent discovery of the narrow band gap of InN. The results on the …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Infrared dielectric function spectra and phonon modes of high-quality, single crystalline, and
highly resistive wurtzite ZnO films were obtained from infrared (300–1200 cm− 1) …

We derive a dielectric function tensor model approach to render the optical response of
monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared …

The fundamental band gap of InN has been thought to be about 1.9 eV for a long time.
Recent developments of metalorganic vapor phase epitaxy (MOVPE) and RF-molecular …

Infrared reflection experiments were performed on wurtzite InN films with a range of free-
electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma …

The electronic structure of clean InN (0001) surfaces has been investigated by high-
resolution electron-energy-loss spectroscopy of the conduction band electron plasmon …

Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic
In may have been erroneously interpreted as the infrared band gap absorption in tens of …