Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

Reconfigurable transistors are an emerging device technology adding new functionalities
while lowering the circuit architecture complexity. However, most investigations focus on …

III–V semiconductors have attractive transport properties suitable for low-power, high-speed
complementary metal–oxide-semiconductor (CMOS) implementation, but major challenges …

Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the
same individual InAs nanowires grown by metal–organic chemical vapor deposition. NPC …

III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …

In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied
theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate …

III–V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of
interests in recent years as potential next-generation metal–oxide–semiconductor field-effect …

The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via
the vapor–liquid–solid (VLS) mechanism has redefined the long-standing symbolic image of …