A Compact 238–278-GHz Frequency Sextupler Based on a Single Bootstrapped Gilbert Cell
We present an integrated frequency multiplier-by-six (sextupler) for signal generation at-
band (220–325 GHz) frequencies. Typically, multiplication-by-six in state-of-the-art designs …
band (220–325 GHz) frequencies. Typically, multiplication-by-six in state-of-the-art designs …
A 640-Gb/s 4 4-MIMO D-Band CMOS Transceiver Chipset
This work presents a D-band (110–170 GHz) CMOS transceiver (TRX) chipset that covers a
56-GHz (114–170 GHz) signal-chain bandwidth. Both the transmitter (TX) and the receiver …
56-GHz (114–170 GHz) signal-chain bandwidth. Both the transmitter (TX) and the receiver …
Technology-Dependent Capacity Analysis for 6G RF Front Ends With D-Band Implementation Using 22-nm CMOS SOI
This article presents a system-level analysis of the maximum achievable data rate in a
phased array wireless link limited by the RF front end (FE) technology and frequency …
phased array wireless link limited by the RF front end (FE) technology and frequency …
A 300-GHz-Band 36-Gb/s Scalable 2x2 2D Phased-Array CMOS Receiver
Two-dimensional beamforming is a significant challenge for subterahertz transceivers. In
this paper, we propose a two-dimensional beamforming receiver (RX) circuit that can be …
this paper, we propose a two-dimensional beamforming receiver (RX) circuit that can be …
A Proton Irradiated CMOS On-Chip Vivaldi Antenna for 300 GHz Band Slat Array Implementation
As the CMOS transceiver reaches the sub-millimeter wave operating frequency, its circuit
area cannot keep up with the shrinkage of the area limit for the typical 2-dimensional (2D) …
area cannot keep up with the shrinkage of the area limit for the typical 2-dimensional (2D) …
Challenges and Innovations in CMOS-Based 300 GHz Transceivers for High-Speed Wireless Communication
M Fujishima - IEEE Open Journal of the Solid-State Circuits …, 2024 - ieeexplore.ieee.org
The IEEE 802.15. 3d standard, issued in October 2017, defined a high-data-rate wireless
physical layer using the 252–325–GHz frequency band, also known as the 300-GHz band …
physical layer using the 252–325–GHz frequency band, also known as the 300-GHz band …
Two-Dimensional Fixed-Frequency Terahertz Beam Steering with Micro-Actuated Leaky-Wave Structure
N Tanaka, Y Monnai - IEEE Transactions on Terahertz Science …, 2024 - ieeexplore.ieee.org
As the demand for high-speed communications grows, terahertz waves emerge as a
promising frontier for 6G and beyond, offering unprecedented bandwidths. However, their …
promising frontier for 6G and beyond, offering unprecedented bandwidths. However, their …
Dual-Layer Proton Irradiation for Passive Component Enhancement and Noise Coupling Suppression on CMOS Process
This work presents the development of a dual-layer proton irradiation profile to decrease the
fluence required to create a thermally stable localized high-resistivity silicon (HR-Si) …
fluence required to create a thermally stable localized high-resistivity silicon (HR-Si) …
300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter
In this invited paper, we introduce a 300-GHz-band power amplifier (PA) IC and module
designed and fabricated in 250-nm InP DHBT technology and a 300-GHz-band InP-CMOS …
designed and fabricated in 250-nm InP DHBT technology and a 300-GHz-band InP-CMOS …
A 225-264 GHz Wideband Amplifier in 65 nm CMOS with Optimized 10 μm Transistor Layout
This paper presents a 300 GHz band wideband amplifier implemented in 65 nm CMOS. The
amplifier exhibits a gain of over 9 dB between 225 and 264 GHz in measurement, operating …
amplifier exhibits a gain of over 9 dB between 225 and 264 GHz in measurement, operating …