Roadmap for ferroelectric domain wall nanoelectronics

P Sharma, TS Moise, L Colombo… - Advanced Functional …, 2022 - Wiley Online Library
Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

A critical review on recent developments in advanced supercapacitors for veterinary medicine

RD Prasad, CB Desai, OP Srivastava… - ES Food & …, 2023 - espublisher.com
A next-generation technology, the Super-capacitor, has emerged with the potential to enable
significant advances in energy storage. The fundamental phenomenon and equations for …

Ferroelectric Domain Wall p–n Junctions

JR Maguire, CJ McCluskey, KM Holsgrove, A Suna… - Nano Letters, 2023 - ACS Publications
We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of
electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut …

[HTML][HTML] 100 years of ferroelectricity—a celebration

RW Whatmore, YM You, RG **ong, CB Eom - APL Materials, 2021 - pubs.aip.org
In 1880, the brothers Jacques and Pierre Curie were studying the phenomenon of
pyroelectricity. This is the effect where crystals that both lack a center-of-symmetry (ie, are …

Neuromorphic functionality of ferroelectric domain walls

P Sharma, J Seidel - Neuromorphic Computing and Engineering, 2023 - iopscience.iop.org
Mimicking and replicating the function of biological synapses with engineered materials is a
challenge for the 21st century. The field of neuromorphic computing has recently seen …

The third dimension of ferroelectric domain walls

ED Roede, K Shapovalov, TJ Moran… - Advanced …, 2022 - Wiley Online Library
Ferroelectric domain walls are quasi‐2D systems that show great promise for the
development of nonvolatile memory, memristor technology, and electronic components with …

Configurable crack wall conduction in a complex oxide

Y Yeo, SY Hwang, J Yeo, J Kim, J Jang, HS Park… - Nano Letters, 2023 - ACS Publications
Mobile defects in solid-state materials play a significant role in memristive switching and
energy-efficient neuromorphic computation. Techniques for confining and manipulating …

Negative capacitance field effect transistors based on van der Waals 2D materials

RS Chen, Y Lu - Small, 2024 - Wiley Online Library
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …

A Critical Review on Design and Development of New Generation Energy Storage Devices

GJ Navathe, SR Prasad, AM Mane… - ES Energy & …, 2022 - espublisher.com
A next-generation technology, the Supercapacitor, has emerged with the potential to enable
significant advances in energy storage. Supercapacitors are governed by the same …

Unveiling alternating current electronic properties at ferroelectric domain walls

J Schultheiß, T Rojac, D Meier - Advanced Electronic Materials, 2022 - Wiley Online Library
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now
widely recognized as functional 2D systems for the development of next‐generation …