Roadmap for ferroelectric domain wall nanoelectronics
Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …
electronic properties distinct from the bulk that can also be electrically programmed. These …
A critical review on recent developments in advanced supercapacitors for veterinary medicine
RD Prasad, CB Desai, OP Srivastava… - ES Food & …, 2023 - espublisher.com
A next-generation technology, the Super-capacitor, has emerged with the potential to enable
significant advances in energy storage. The fundamental phenomenon and equations for …
significant advances in energy storage. The fundamental phenomenon and equations for …
Ferroelectric Domain Wall p–n Junctions
We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of
electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut …
electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut …
[HTML][HTML] 100 years of ferroelectricity—a celebration
In 1880, the brothers Jacques and Pierre Curie were studying the phenomenon of
pyroelectricity. This is the effect where crystals that both lack a center-of-symmetry (ie, are …
pyroelectricity. This is the effect where crystals that both lack a center-of-symmetry (ie, are …
Neuromorphic functionality of ferroelectric domain walls
Mimicking and replicating the function of biological synapses with engineered materials is a
challenge for the 21st century. The field of neuromorphic computing has recently seen …
challenge for the 21st century. The field of neuromorphic computing has recently seen …
The third dimension of ferroelectric domain walls
ED Roede, K Shapovalov, TJ Moran… - Advanced …, 2022 - Wiley Online Library
Ferroelectric domain walls are quasi‐2D systems that show great promise for the
development of nonvolatile memory, memristor technology, and electronic components with …
development of nonvolatile memory, memristor technology, and electronic components with …
Configurable crack wall conduction in a complex oxide
Mobile defects in solid-state materials play a significant role in memristive switching and
energy-efficient neuromorphic computation. Techniques for confining and manipulating …
energy-efficient neuromorphic computation. Techniques for confining and manipulating …
Negative capacitance field effect transistors based on van der Waals 2D materials
RS Chen, Y Lu - Small, 2024 - Wiley Online Library
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
A Critical Review on Design and Development of New Generation Energy Storage Devices
A next-generation technology, the Supercapacitor, has emerged with the potential to enable
significant advances in energy storage. Supercapacitors are governed by the same …
significant advances in energy storage. Supercapacitors are governed by the same …
Unveiling alternating current electronic properties at ferroelectric domain walls
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now
widely recognized as functional 2D systems for the development of next‐generation …
widely recognized as functional 2D systems for the development of next‐generation …