CMOS compatibility of semiconductor spin qubits
Several domains of society will be disrupted once millions of high-quality qubits can be
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …
Robust technology computer-aided design of gated quantum dots at cryogenic temperature
We present non-linear Poisson and Schrödinger simulations of an industrially fabricated
gated quantum dot device at 100 mK using the Quantum-Technology Computer-Aided …
gated quantum dot device at 100 mK using the Quantum-Technology Computer-Aided …
Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device
In this study, 3D simulations are introduced to analyze electric-dipole spin resonance
(EDSR) for a spin qubit defined in a 28 nm-node Ultra-Thin Body and Buried oxide (UTBB) …
(EDSR) for a spin qubit defined in a 28 nm-node Ultra-Thin Body and Buried oxide (UTBB) …
Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling
The channel lengths of transistors are now nearing the nanometer, making these devices
increasingly prone to direct source-to-drain tunneling (DSDT), a leakage mechanism …
increasingly prone to direct source-to-drain tunneling (DSDT), a leakage mechanism …
Numerical simulation of electro-thermal properties in FDSOI MOSFETs down to deep cryogenic temperatures
G Ghibaudo, F Balestra - Journal of Electronics and Electrical …, 2023 - cnrs.hal.science
An original reformulation of the thermopower S, heat conductivity K and heat capacitance C
in bulk silicon for electrons and phonons is first proposed. Closed-form analytical …
in bulk silicon for electrons and phonons is first proposed. Closed-form analytical …
Numerical simulation and analytical modelling of self-heating in FDSOI MOSFETs down to very deep cryogenic temperatures
G Ghibaudo, M Cassé, F Balestra - arxiv preprint arxiv:2309.04199, 2023 - arxiv.org
Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on
30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature …
30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature …
Bounded Distribution Functions for Applied Physics, Especially Electron Device Simulation at Deep-Cryogenic Temperatures
A Beckers - arxiv preprint arxiv:2212.01786, 2022 - arxiv.org
Numerical underflow and overflow are major hurdles for rolling-out the modeling and
simulation infrastructure for temperatures below about 50 K. Extending the numeric …
simulation infrastructure for temperatures below about 50 K. Extending the numeric …
Transport characterization and quantum dot coupling in commercial 22FDX
GA Elbaz, PL Julliard, M Cassé, H Niebojewski… - arxiv preprint arxiv …, 2025 - arxiv.org
Different groups worldwide have been working with the GlobalFoundries 22nm platform
(22FDX) with the hopes of industrializing the fabrication of Si spin qubits. To guide this effort …
(22FDX) with the hopes of industrializing the fabrication of Si spin qubits. To guide this effort …
Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully
depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit …
depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit …
Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs),
fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a …
fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a …