The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits
in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them …

Two‐dimensional dopant layers (δ‐layers) in semiconductors provide the high‐mobility
electron liquids (2DELs) needed for nanoscale quantum‐electronic devices. Key parameters …

The s manifold energy levels for phosphorus donors in silicon are important input
parameters for the design and modeling of electronic devices on the nanoscale. In this …

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon
host, a two-dimensional electron gas is formed within the dopant region. Quantum …

The downscaling of silicon-based structures and proto-devices has now reached the single-
atom scale, representing an important milestone for the development of a silicon-based …

In this work, the conduction band electron states and the associated intersubband-related
linear and nonlinear optical absorption coefficient and relative refractive index change are …

Recent work on atomic-precision dopant incorporation technologies has led to the creation
of both boron and aluminum δ-doped layers in silicon with densities above the solid …

By suppressing an undesirable surface Umklapp process, it is possible to resolve the two
most occupied states (1Γ and 2Γ) in a buried two-dimensional electron gas (2DEG) in …

Delta do** (δ-do**) has extensive applications in advanced metal oxide semiconductor
field effect transistors, quantum devices, and deep ultraviolet (DUV) photodetectors. In this …

Semiconductor do** is a process of fundamental importance to semiconductor physics
and solid-state electronics, but cannot be explicitly simulated from first principles due to the …