Progress, challenges, and opportunities in two-dimensional materials beyond graphene

SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta… - ACS …, 2013 - ACS Publications
Graphene's success has shown that it is possible to create stable, single and few-atom-thick
layers of van der Waals materials, and also that these materials can exhibit fascinating and …

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

SL Li, K Tsukagoshi, E Orgiu, P Samorì - Chemical Society Reviews, 2016 - pubs.rsc.org
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks… - ACS …, 2014 - ACS Publications
With advances in exfoliation and synthetic techniques, atomically thin films of
semiconducting transition metal dichalcogenides have recently been isolated and …

Hysteresis in the transfer characteristics of MoS2 transistors

A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo… - 2D …, 2017 - iopscience.iop.org
We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

W Zhu, T Low, YH Lee, H Wang, DB Farmer… - Nature …, 2014 - nature.com
Layered transition metal dichalcogenides display a wide range of attractive physical and
chemical properties and are potentially important for various device applications. Here we …

Sulfur vacancies in monolayer MoS2 and its electrical contacts

D Liu, Y Guo, L Fang, J Robertson - Applied Physics Letters, 2013 - pubs.aip.org
The use of reactive electropositive metal contacts is proposed to lower contact resistance in
MoS 2 devices, based on calculations of the sulfur vacancy in MoS 2 by the screened …

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

D Jariwala, VK Sangwan, DJ Late, JE Johns… - Applied Physics …, 2013 - pubs.aip.org
Ultra-thin MoS 2 has recently emerged as a promising two-dimensional semiconductor for
electronic and optoelectronic applications. Here, we report high mobility (> 60 cm 2/Vs at …

Field-Effect Transistors Based on Few-Layered α-MoTe2

NR Pradhan, D Rhodes, S Feng, Y **n, S Memaran… - ACS …, 2014 - ACS Publications
Here we report the properties of field-effect transistors based on a few layers of chemical
vapor transport grown α-MoTe2 crystals mechanically exfoliated onto SiO2. We performed …

Universal Fermi-level pinning in transition-metal dichalcogenides

K Sotthewes, R Van Bremen, E Dollekamp… - The Journal of …, 2019 - ACS Publications
Understanding the electron transport through transition-metal dichalcogenide (TMDC)-
based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-) …

Electrochemical synthesis of luminescent MoS 2 quantum dots

D Gopalakrishnan, D Damien, B Li… - Chemical …, 2015 - pubs.rsc.org
Size-controlled synthesis of luminescent quantum dots of MoS2 (≤ 2 layers) with narrow
size distribution, ranging from 2.5 to 6 nm, from their bulk material using a unique …