III–N–V semiconductors for solar photovoltaic applications
Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …
multijunction solar cells because these materials can be lattice matched to substrates such …
Interactions between nitrogen, hydrogen, and gallium vacancies in alloys
The effects of H on the interaction between Ga vacancies V Ga and N in GaAs 1− x N x dilute
alloys are studied through first-principles total-energy calculations. We find that N binds to …
alloys are studied through first-principles total-energy calculations. We find that N binds to …
Hydrogen-induced improvements in optical quality of GaNAs alloys
Strong suppression of potential fluctuations in the band edges of GaNAs alloys due to
postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band …
postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band …
Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots
The fabrication of integrated quantum dot (QD)-optical microcavity systems is a requisite
step for the realization of a wide range of nanophotonic experiments (and applications) that …
step for the realization of a wide range of nanophotonic experiments (and applications) that …
Single photons on demand from novel site-controlled GaAsN/GaAsN: H quantum dots
We demonstrate triggered single-photon emission from a novel system of site-controlled
quantum dots (QDs), fabricated by exploiting the hydrogen-assisted, spatially selective …
quantum dots (QDs), fabricated by exploiting the hydrogen-assisted, spatially selective …
[PDF][PDF] In‐plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors
In modern epitaxial growth techniques, the control of the electronic and optical properties of
a semiconductor heterostructure along the growth direction is achieved easily through layer …
a semiconductor heterostructure along the growth direction is achieved easily through layer …
Hydrogen Incorporation in III‐N‐V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties
The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …
Beryllium do** of GaAs and GaAsN studied from first principles
We have studied beryllium defects in GaAs and GaAsN from first principles, concentrating on
the nitrogen effect on the defect formation and the beryllium effect on the nitrogen alloying …
the nitrogen effect on the defect formation and the beryllium effect on the nitrogen alloying …
Formation and dissolution of DN complexes in dilute nitrides
M Berti, G Bisognin, D De Salvador, E Napolitani… - Physical Review B …, 2007 - APS
Deuterium (hydrogen) incorporation in dilute nitrides (eg, GaAsN and GaPN) modifies
dramatically the crystal's electronic and structural properties and represents a prominent …
dramatically the crystal's electronic and structural properties and represents a prominent …
Hydrogen diffusion in
Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically
the electronic and structural properties of the crystal through the creation of nitrogen …
the electronic and structural properties of the crystal through the creation of nitrogen …