We identify a dominant light-emitting center in ion-implanted GaN: Eu 3+ for which the lattice
damage has been completely healed, according to x-ray diffraction and Rutherford …

The structural and electronic properties of rare-earth (RE)(Eu, Er, and Tm) related defect
pairs in GaN have been investigated theoretically. Based on LDA+ U total-energy …

Rare-earth (RE) doped III-nitrides, prepared by in-situ do** during growth or by ion
implantation and annealing, are promising materials for visible light emitting displays. In …

Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that
protects the GaN surface during the implantation and also serves as a cap** layer during …

The effect of adding terbium to indium tin oxide (ITO) thin films on the electrical, optical and
light emission properties was investigated. The films were prepared by radio frequency dual …

Gallium nitride films epitaxially grown on sapphire, were irradiated at room temperature with
80 keV Er+ 166 or 170 keV Er 2+ 166 ions to fluences ranging from 1× 10 13 cm− 2 to 1× 10 …

We report direct evidence of two mechanisms responsible for the excitation of optically
active Er 3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition …

Ga 2 O 3 bulk single crystals have been implanted with 300 keV Europium ions to fluences
ranging from 1× 10 13 to 4× 10 15 at/cm 2. The damage build-up and Eu-incorporation was …

GaN epilayers grown by MOCVD were implanted with Tm and Eu under different
implantation conditions, in order to optimize the implantation parameters of fluence …

A comparison is presented between Eu implanted and Eu in situ doped GaN thin films
showing that two predominant Eu sites are optically active around 620 nm in both types of …