Nanostructured thin films based on TiO2 and/or SiC for use in photoelectrochemical cells: A review of the material characteristics, synthesis and recent applications
In solar energy harvesting research, there is growing interest in the study of
photoelectrochemical (PEC) properties of the following classes of semiconductor materials …
photoelectrochemical (PEC) properties of the following classes of semiconductor materials …
Chemical vapor deposition of graphene on self-limited SiC interfacial layers formed on silicon substrates for heterojunction devices
Direct chemical vapor deposition (CVD) of graphene on any desired substrate is always
required to manufacture high-quality heterojunctions with excellent interfacial properties …
required to manufacture high-quality heterojunctions with excellent interfacial properties …
Thermal stability of thiol and silane monolayers: A comparative study
The stability of self-assembled monolayers (SAMs) at elevated temperatures is of
considerable technological importance. The thermal stability of 1-octadecanethiol (ODT), 16 …
considerable technological importance. The thermal stability of 1-octadecanethiol (ODT), 16 …
[HTML][HTML] Wear-resistant and adherent nanodiamond composite thin film for durable and sustainable silicon carbide mechanical seals
In response to environmental concerns, there is a growing demand for durable and
sustainable mechanical seals, particularly in high-risk industries like chemical, petroleum …
sustainable mechanical seals, particularly in high-risk industries like chemical, petroleum …
Silicon carbide gas distribution plate and RF electrode for plasma etch chamber
R Wu, T Ni - US Patent 7,992,518, 2011 - Google Patents
Feb. 27, 2007 (CN).......................... 2007 1 00377O1 (57) ABSTRACT (51) Int. Cl. A
showerhead for use in a capacitively-coupled plasma C23C I6/50(2006.01) chamber and …
showerhead for use in a capacitively-coupled plasma C23C I6/50(2006.01) chamber and …
Synthesis and characterization of crystalline silicon carbide nanoribbons
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented.
Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed …
Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed …
An in-operando evaluation identified the oxidative failure mechanism of TiN hard coatings during extreme thermal cycling
We determine the definitive failure mechanism of passivated TiN films by in-operando
monitoring extreme temperature (650° C) induced microstructure, chemical, and mechanical …
monitoring extreme temperature (650° C) induced microstructure, chemical, and mechanical …
Coexistence of space charge limited and variable range hop** conduction mechanism in sputter-deposited Au/SiC metal–semiconductor–metal device
Despite being the cornerstone of high-temperature and high-power applications, the
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were
fabricated and their resistive switching characteristics investigated. All four possible modes …
fabricated and their resistive switching characteristics investigated. All four possible modes …
Selective epitaxy and lateral overgrowth of 3C-SiC on Si–A review
A Gupta, C Jacob - Progress in crystal growth and characterization of …, 2005 - Elsevier
This review article attempts to present a comprehensive picture of the progress in selective
epitaxial growth (SEG) of cubic silicon carbide (3C-SiC) to make it a cheap and practical …
epitaxial growth (SEG) of cubic silicon carbide (3C-SiC) to make it a cheap and practical …