Recent progress in synthesis, properties and potential applications of SiC nanomaterials
As nanotechnology rapidly advanced over the past decades, a variety of nanomaterials
have been developed and studied. Among them, SiC nanomaterials have recently attracted …
have been developed and studied. Among them, SiC nanomaterials have recently attracted …
Synthesis, properties, and multifarious applications of SiC nanoparticles: A review
Y Wang, S Dong, X Li, C Hong, X Zhang - Ceramics International, 2022 - Elsevier
The development of particulate materials is accelerating at a tremendous speed and
nanoparticles have gradually gained worldwide attention. Among them, silicon carbide (SiC) …
nanoparticles have gradually gained worldwide attention. Among them, silicon carbide (SiC) …
Coherent control of single spins in silicon carbide at room temperature
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such
as defects in diamond,,, or individual phosphorus dopants in silicon have shown spectacular …
as defects in diamond,,, or individual phosphorus dopants in silicon have shown spectacular …
Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide
J Zhao, P Ji, Y Li, R Li, K Zhang, H Tian, K Yu, B Bian… - Nature, 2024 - nature.com
Semiconducting graphene plays an important part in graphene nanoelectronics because of
the lack of an intrinsic bandgap in graphene. In the past two decades, attempts to modify the …
the lack of an intrinsic bandgap in graphene. In the past two decades, attempts to modify the …
Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs
SS Kong, WK Liu, XX Yu, YL Li, LZ Yang, Y Ma… - Frontiers of …, 2023 - Springer
Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of
new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of …
new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of …
Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes
YY Yang, P Gong, WD Ma, R Hao, XY Fang - Chinese Physics B, 2021 - iopscience.iop.org
Silicon carbide nanotubes (SiCNTs) have broad application prospects in the field of micro-
nanodevices due to their excellent physical properties. Based on first-principles, the …
nanodevices due to their excellent physical properties. Based on first-principles, the …
The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review
Silicon carbide (SiC) is one of the most promising materials for applications in harsh
environments thanks to its excellent electrical, mechanical, and chemical properties. The …
environments thanks to its excellent electrical, mechanical, and chemical properties. The …
Long-lived, transferred crystalline silicon carbide nanomembranes for implantable flexible electronics
Implantable electronics are of great interest owing to their capability for real-time and
continuous recording of cellular–electrical activity. Nevertheless, as such systems involve …
continuous recording of cellular–electrical activity. Nevertheless, as such systems involve …
Exploring the nonlinear piezoresistive effect of 4H-SiC and develo** MEMS pressure sensors for extreme environments
C Wu, X Fang, Q Kang, Z Fang, J Wu, H He… - Microsystems & …, 2023 - nature.com
Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used
and offer the benefits of miniaturization and high precision. However, they cannot easily …
and offer the benefits of miniaturization and high precision. However, they cannot easily …
[HTML][HTML] Wide bandgap semiconductor-based integrated circuits
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …
traditional semiconductors such as silicon, rendering them very promising for applications in …