Recent progress in synthesis, properties and potential applications of SiC nanomaterials

R Wu, K Zhou, CY Yue, J Wei, Y Pan - Progress in Materials Science, 2015 - Elsevier
As nanotechnology rapidly advanced over the past decades, a variety of nanomaterials
have been developed and studied. Among them, SiC nanomaterials have recently attracted …

Synthesis, properties, and multifarious applications of SiC nanoparticles: A review

Y Wang, S Dong, X Li, C Hong, X Zhang - Ceramics International, 2022 - Elsevier
The development of particulate materials is accelerating at a tremendous speed and
nanoparticles have gradually gained worldwide attention. Among them, silicon carbide (SiC) …

Coherent control of single spins in silicon carbide at room temperature

M Widmann, SY Lee, T Rendler, NT Son, H Fedder… - Nature materials, 2015 - nature.com
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such
as defects in diamond,,, or individual phosphorus dopants in silicon have shown spectacular …

Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide

J Zhao, P Ji, Y Li, R Li, K Zhang, H Tian, K Yu, B Bian… - Nature, 2024 - nature.com
Semiconducting graphene plays an important part in graphene nanoelectronics because of
the lack of an intrinsic bandgap in graphene. In the past two decades, attempts to modify the …

Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs

SS Kong, WK Liu, XX Yu, YL Li, LZ Yang, Y Ma… - Frontiers of …, 2023 - Springer
Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of
new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of …

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes

YY Yang, P Gong, WD Ma, R Hao, XY Fang - Chinese Physics B, 2021 - iopscience.iop.org
Silicon carbide nanotubes (SiCNTs) have broad application prospects in the field of micro-
nanodevices due to their excellent physical properties. Based on first-principles, the …

The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review

HP Phan, DV Dao, K Nakamura… - Journal of …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) is one of the most promising materials for applications in harsh
environments thanks to its excellent electrical, mechanical, and chemical properties. The …

Long-lived, transferred crystalline silicon carbide nanomembranes for implantable flexible electronics

HP Phan, Y Zhong, TK Nguyen, Y Park, T Dinh… - ACS …, 2019 - ACS Publications
Implantable electronics are of great interest owing to their capability for real-time and
continuous recording of cellular–electrical activity. Nevertheless, as such systems involve …

Exploring the nonlinear piezoresistive effect of 4H-SiC and develo** MEMS pressure sensors for extreme environments

C Wu, X Fang, Q Kang, Z Fang, J Wu, H He… - Microsystems & …, 2023 - nature.com
Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used
and offer the benefits of miniaturization and high precision. However, they cannot easily …

[HTML][HTML] Wide bandgap semiconductor-based integrated circuits

S Yuvaraja, V Khandelwal, X Tang, X Li - Chip, 2023 - Elsevier
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …