A modeling framework for NBTI degradation under dynamic voltage and frequency scaling
A modeling framework is proposed to predict the degradation and recovery of threshold
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …
voltage shift (ΔV T) due to negative bias temperature instability. Double interface reaction …
[KNJIGA][B] Fundamentals of bias temperature instability in mos transistors
S Mahapatra - 2016 - Springer
Bias Temperature Instability (BTI) is a serious reliability concern and continues to threaten
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …
Universality of NBTI-From devices to circuits and products
S Mahapatra, V Huard, A Kerber… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
This paper showcases the universality of NBTI and its dependencies on time, bias,
temperature, AC frequency and pulse duty cycle across different process integration …
temperature, AC frequency and pulse duty cycle across different process integration …
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs
Independent Trap Generation (TG) monitors such as DCIV and SILC have been used during
NBTI, PBTI (and TDDB) stress in differently processed HKMG devices. TG from DCIV for …
NBTI, PBTI (and TDDB) stress in differently processed HKMG devices. TG from DCIV for …
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress
A transient trap occupancy model is proposed to determine the charged state of generated N
IT in real time during successive stress (pulse ON) and recovery (pulse OFF) cycles for DC …
IT in real time during successive stress (pulse ON) and recovery (pulse OFF) cycles for DC …
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
A comprehensive modeling framework involving mutually uncorrelated contribution from
interface trap generation and hole trap** in pre-existing, process related gate insulator …
interface trap generation and hole trap** in pre-existing, process related gate insulator …
Role of oxygen vacancy in the performance variability and lattice temperature of the stacked Nanosheet FET
RK Pandey - IEEE Access, 2024 - ieeexplore.ieee.org
We have carried out a detailed study of the impact of oxygen vacancies (O), on the
performance and the lattice temperature variation in a stacked silicon nanosheet field effect …
performance and the lattice temperature variation in a stacked silicon nanosheet field effect …
A comparative study of NBTI and PBTI using different experimental techniques
Degradation in planar high-k metal gate pand n-channel MOSFETs, respectively, under
negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) …
negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) …
Consistency of the two component composite modeling framework for NBTI in large and small area p-MOSFETs
A Chaudhary, B Fernandez, N Parihar… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Consistency of the recently proposed deterministic composite modeling framework for
Negative Bias Temperature Instability (NBTI) in large area devices is verified for stochastic …
Negative Bias Temperature Instability (NBTI) in large area devices is verified for stochastic …
Characterization methods for BTI degradation and associated gate insulator defects
In this chapter, different characterization methods are discussed to determine BTI
degradation of MOSFET parameters and to directly estimate the pre-existing and generated …
degradation of MOSFET parameters and to directly estimate the pre-existing and generated …