Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
The nonradiative lifetime (τ NR) of the near-band-edge emission in various quality GaN
samples is compared with the results of positron annihilation measurement, in order to …
samples is compared with the results of positron annihilation measurement, in order to …
Bulk and epitaxial growth of silicon carbide
T Kimoto - Progress in Crystal Growth and Characterization of …, 2016 - Elsevier
Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …
strength, making it especially attractive for high-power and high-temperature devices …
Impurities and defects in 4H silicon carbide
R Wang, Y Huang, D Yang, X Pi - Applied Physics Letters, 2023 - pubs.aip.org
The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
Current status and perspectives of ultrahigh-voltage SiC power devices
T Kimoto, Y Yonezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
Multistability of isolated and hydrogenated Ga–O divacancies in
YK Frodason, C Zimmermann, EF Verhoeven… - Physical Review …, 2021 - APS
This work systematically explores 19 unique configurations of the close-associate Ga–O
divacancies (V Ga VO) in β-Ga 2 O 3, including their complexes with H impurities, using …
divacancies (V Ga VO) in β-Ga 2 O 3, including their complexes with H impurities, using …
Ultrahigh-voltage SiC pin diodes with improved forward characteristics
Silicon carbide (SiC) pin diodes having five different n--layer (i-layer) thicknesses from 48 to
268 μm are fabricated. The forward characteristics of SiC pin diodes are significantly …
268 μm are fabricated. The forward characteristics of SiC pin diodes are significantly …
Optical charge state control of spin defects in 4H-SiC
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active
spin-based quantum technologies. Spin qubits exist in specific charge states of these …
spin-based quantum technologies. Spin qubits exist in specific charge states of these …
Conversion pathways of primary defects by annealing in proton-irradiated -type -SiC
The development of defect populations after proton irradiation of n-type 4 H-SiC and
subsequent annealing experiments is studied by means of deep level transient (DLTS) and …
subsequent annealing experiments is studied by means of deep level transient (DLTS) and …