Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X= S, Se, Te)
have recently attracted extensive attention in the material research community due to their …

Benefiting from the superior electron mobility and good air‐stability, the emerging layered
bismuth oxyselenide (Bi2O2Se) nanosheet has received considerable attention with the …

As a recent addition to the emerging 2D bismuth oxychalcogenides (Bi2O2X, where X= S,
Se, and Te), atomically‐thin bismuth oxytellurium (Bi2O2Te) exhibits unique thermoelectric …

The study of 2D materials has been a significant and fascinating area, at least since the
discovery of graphene. As one of the layered bismuth oxychalcogenides, bismuth …

Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

Two-dimensional (2D) semiconductors have attracted tremendous interest as natural
passivation and atomically thin channels could facilitate continued transistor scaling …

In the post-Moore era, improving energy efficiency is an urgent requirement for
microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In …

The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors
(FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices …

We report the performance of field-effect transistors (FETs), composed of monolayer of
recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using …