Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe2 Active Layer
In this work, a unique composite of a polymer and two-dimensional material (PVP: MoSe2) is
demonstrated as a potential resistive switching layer for flexible resistive random-access …
demonstrated as a potential resistive switching layer for flexible resistive random-access …
2D MoS2 monolayers integration with metal oxide-based artificial synapses
In this study, we report on a memristive device structure wherein monolayers of two-
dimensional (2D) molybdenum disulfide (MoS2) are integrated with an ultrathin yttrium oxide …
dimensional (2D) molybdenum disulfide (MoS2) are integrated with an ultrathin yttrium oxide …
[HTML][HTML] Non-Idealities in Memristor Devices and Methods of Mitigating Them
One of the main issues that memristors face, like other hardware components, is non-
idealities (that can arise from long-term usage, low-quality hardware, etc.). In this chapter …
idealities (that can arise from long-term usage, low-quality hardware, etc.). In this chapter …