Progress in research into 2D graphdiyne-based materials
C Huang, Y Li, N Wang, Y Xue, Z Zuo, H Liu… - Chemical …, 2018 - ACS Publications
Graphynes (GYs) are carbon allotropes with single-atom thickness that feature layered 2D
structure assembled by carbon atoms with sp-and sp2-hybridization form. Various functional …
structure assembled by carbon atoms with sp-and sp2-hybridization form. Various functional …
Carbon nanotubes and related nanomaterials: critical advances and challenges for synthesis toward mainstream commercial applications
Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes
(SWCNTs) remain critical to realizing many important commercial applications. Here we …
(SWCNTs) remain critical to realizing many important commercial applications. Here we …
Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits
smaller than 10 nanometers, but this would require scalable production of dense and …
smaller than 10 nanometers, but this would require scalable production of dense and …
Chirality pure carbon nanotubes: Growth, sorting, and characterization
Single-walled carbon nanotubes (SWCNTs) have been attracting tremendous attention
owing to their structure (chirality) dependent outstanding properties, which endow them with …
owing to their structure (chirality) dependent outstanding properties, which endow them with …
High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from
the conventional rigid silicon technology, have stimulated fundamental scientific and …
the conventional rigid silicon technology, have stimulated fundamental scientific and …
Scaling carbon nanotube complementary transistors to 5-nm gate lengths
High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate
length of 5 nanometers can be fabricated that perform better than silicon complementary …
length of 5 nanometers can be fabricated that perform better than silicon complementary …
Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Graphene nanoribbons: on‐surface synthesis and integration into electronic devices
Z Chen, A Narita, K Müllen - Advanced Materials, 2020 - Wiley Online Library
Graphene nanoribbons (GNRs) are quasi‐1D graphene strips, which have attracted
attention as a novel class of semiconducting materials for various applications in electronics …
attention as a novel class of semiconducting materials for various applications in electronics …
Nanomaterials in transistors: From high-performance to thin-film applications
AD Franklin - Science, 2015 - science.org
BACKGROUND Transistors are one of the most enabling “hidden” technologies of all time
and have facilitated the development of computers, the Internet, thin mobile displays, and …
and have facilitated the development of computers, the Internet, thin mobile displays, and …
Materials science challenges to graphene nanoribbon electronics
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …