A common misconception is that the irradiation of solids with energetic electrons and ions
has exclusively detrimental effects on the properties of target materials. In addition to the …

Ion beam irradiation is a potential tool for phase formation and material modification as a
non-equilibrium technique. Localized rise in temperature and ultra fast (∼ 10− 12 s) …

The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …

Si nanoclusters embedded in SiO 2 have been produced by thermal annealing of SiO x films
prepared by plasma enhanced chemical vapor deposition. The structural properties of the …

We present our work on high performance germanium (Ge) quantum dot (QD)
photodetectors (PDs), fabricated on Si and Ge substrates, that operate via tunneling …

The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared
electroluminescences (ELs) of Si-rich SiO 2 films synthesized by Si-ion implantation and …

In the present article, a detailed study of the optical properties of the Er-doped Si
nanocrystals system, obtained through ion implantation of Er in samples containing Si …

In this letter, the role of amorphous Si clusters in the excitation of Er implanted in
substoichiometric SiO x films will be elucidated. It will be shown that the temperature of the …

The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …

The photon absorption in Si quantum dots (QDs) embedded in SiO 2 has been
systematically investigated by varying several parameters of the QD synthesis. Plasma …