The rapid development of neuro-inspired computing demands synaptic devices with ultrafast
speed, low power consumption, and multiple non-volatile states, among other features …

Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …

Ferroelectric thin film has attracted great interest for nonvolatile memory applications and
can be used in either ferroelectric Schottky diodes or ferroelectric tunneling junctions due to …

Controlling the domain evolution is critical both for optimizing ferroelectric properties and for
designing functional electronic devices. Here we report an approach of using the Schottky …

In this study, the excellent energy storage performance is achieved by constructing opposite
double‐heterojunction ferroelectricity–insulator–ferroelectricity configuration. The PbZr0 …

Memristors with biological synaptic behaviors and functions have been intensively studied
as an important component for neuromorphic computing system, which hold promise to …

Reservoir computing (RC) offers efficient temporal information processing with low training
cost. All-ferroelectric implementation of RC is appealing because it can fully exploit the …

The rapid development of artificial intelligence technology has led to the urge for artificial
optoelectronic synapses with visual perception and memory capabilities. A new type of …

Electric transport in the charged domain wall (CDW) region has emerged as a promising
phenomenon for the development of next-generation ferro-resistive memory with ultrahigh …

Second-order memristors are considered as ideal synaptic emulators for their capability of
exhibiting Ca 2+-like dynamics. Recently, ferroelectric second-order memristors were …