The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …

Internal photoemission spectroscopy provides the most straightforward way to characterize
the relative energies of electron states at interfaces of insulators with metals and …

In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

This year marks a major materials milestone in the makeup of silicon-based field-effect
transistors: in the microprocessors produced by leading manufacturers, the SiO2 gate …

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …

We present calculations of the energy levels of the oxygen vacancy, Al La antisite, and
oxygen interstitial defects in La Al O 3 using density functional methods that do not need an …

Photoelectrochemical (PEC) water splitting has propelled broader research interest for the
large-scale and facile entrapment of solar energy in hydrogen fuel. It offers the most …

Further scaling of complementary metal oxide semiconductor gate stacks will require gate
dielectrics with a higher dielectric constant (K) than HfO 2⁠. We point out that this will require …