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[HTML][HTML] Recent advances in photodetectors based on two-dimensional material/Si heterojunctions
Two-dimensional (2D) materials have gained significant attention owing to their exceptional
electronic and optoelectronic properties, including high carrier mobility, strong light–matter …
electronic and optoelectronic properties, including high carrier mobility, strong light–matter …
Advances in 2D materials based mixed-dimensional heterostructures photodetectors: Present status and challenges
The unique and exceptional properties of two-dimensional (2D) materials have opened
unprecedented opportunities for exploring novel 2D phenomena for optoelectronic …
unprecedented opportunities for exploring novel 2D phenomena for optoelectronic …
Review on metal sulfide-based nanostructures for photodetectors: From ultraviolet to infrared regions
Nanostructured metal sulfides are the potential materials for the development of highly
efficient photodetectors, attributed to their easily tunable physical, chemical, optical, and …
efficient photodetectors, attributed to their easily tunable physical, chemical, optical, and …
Self-powered, broadband, and polarization-sensitive pyroelectric-photoelectric photodetector based on silicon-water heterojunction
The coupling of pyroelectric and photoelectric effects is a new method to enhance transient
response while maintaining steady-state response in photodetectors. Such photodetectors …
response while maintaining steady-state response in photodetectors. Such photodetectors …
A fully printed ultrafast Si/WS 2 quantum dot photodetector with very high responsivity over the UV to near-infrared region
Two-dimensional (2D) semiconducting material-based photodetectors (PDs) with high
responsivity and fast photo-response are of great interest for various applications such as …
responsivity and fast photo-response are of great interest for various applications such as …
[HTML][HTML] Energy-efficient NO2 sensors based on two-dimensional layered 2H-WS2 nanosheets
Layered transition metal dichalcogenides (TMDCs) are considered among the next-
generation materials for gas sensing. Here, we report exfoliated 2 H-WS 2 nanosheets for …
generation materials for gas sensing. Here, we report exfoliated 2 H-WS 2 nanosheets for …
Visible–infrared dual-band detection with a polarization sensitivity based on GeSe/Ge heterojunction field effect transistor
Y Lu, B Wang, M Yang, Q Zhang, Z Jiang… - Applied Physics …, 2023 - pubs.aip.org
Electronic and optoelectronic devices based on two-dimensional (2D)/three-dimensional
(3D) semiconductor heterostructures, combining their respective advantages, have attracted …
(3D) semiconductor heterostructures, combining their respective advantages, have attracted …
Sol-gel prepared amorphous Ta2O5 thin film for application in high LIDT antireflection coating and UV photodetection
S Pal, R Kamparath, VVV Subrahmanyam, N Sharma… - Optical Materials, 2023 - Elsevier
In this report, a sol–gel method has been developed using tantalum ethoxide to produce
homogenous thin films of amorphous Ta 2 O 5 for application in optical coating for high …
homogenous thin films of amorphous Ta 2 O 5 for application in optical coating for high …
PMMA as an Additive for Nanostructured TiO2 Thin Films for Heterojunction Visible-Blind Photodetectors
S Pal, S Jana, R Kamparath, S Bhunia… - ACS Applied Nano …, 2024 - ACS Publications
This study reports on high-quality, crystalline, nanostructured TiO2 thin films with large-area
coverage prepared by the sol–gel process using PMMA (poly (methyl methacrylate)) as an …
coverage prepared by the sol–gel process using PMMA (poly (methyl methacrylate)) as an …
Low Dark-Current V2CTx/n-Si Van Der Waals Schottky Photodiode for Hadamard Single-Pixel Imaging
J Liu, M Lu, Y Cui, Y Sun, Y Ma, Q Guan… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Herein, we presented a novel low dark-current V2CTx/n-Si van der Waals (vdW) Schottky
photodiode. The device exhibited the highest Schottky barrier height of 1.37 eV for Si-based …
photodiode. The device exhibited the highest Schottky barrier height of 1.37 eV for Si-based …