Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform
would open many avenues in silicon-based photonics, quantum technologies and energy …

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been
highly debated in the last few years. Here, we report on the use of indium droplets to tune …

We present the first demonstration of arsenic-rich InAs1− xPx (0≤ x≤ 0.33) nanowire arrays
grown on InP (111) B substrates by catalyst-free selective-area metal–organic chemical …

Among nanoscale structures of different shapes and dimensions nanowires are one of the
most promising because of its truly unique properties different from their bulk counterparts …

Vertical field-effect transistors (FETs) using semiconductor nanowires (NWs) formed by
bottom-up approach are expected to outperform conventional planar transistors owing to …

We present an energetic model to describe the initial stage of growth of GaAs nanowire
seeds in SiOx/Si (111) templates. The model explains the experimentally observed …

Работа посвящена исследованию пространственного распределения концентрации
легирующей примеси в нитевидных нанокристаллах полупроводниковых соединений A …

Bottom-up semiconductor nanowires and their arrays have been frequently highlighted as
building blocks for next-generation optoelectronic devices. Compared with planar thin films …