Abstract Gallium oxide (Ga 2 O 3), as a new kind of ultra− wide band gap semiconductor
material, is widely studied in many fields, such as power electronics, UV− blind …

This review article summarizes the comprehensive work that was done in our laboratory in
recent years, as-well-as other reports, on the various aspects of sonochemistry of molten …

oriented β-Ga 2 O 3 thin films were grown on c-plane sapphire substrates by plasma-
assisted molecular beam epitaxy. In-plane X-ray diffraction measurements revealed the …

In this report, we demonstrate high spectral responsivity (SR) solar blind deep ultraviolet
(UV) β-Ga_2O_3 metal-semiconductor-metal (MSM) photodetectors grown by the mist …

Gallium is a near room temperature liquid metal with extraordinary properties that partly
originate from the self‐limiting oxide layer formed on its surface. Taking advantage of the …

Resistive oxygen sensors based on gallium oxide were fabricated in order to analyze their
sensing performances (as sensitivity, response, and recovery time) in an oxygen …

The influence of the Ga content (0–17 wt%) on the structural properties and the catalytic
behavior of flame-synthesized TiO2-supported gallium oxide in the oxidative …

Herein we describe an efficient low temperature (60–160° C) plasma enhanced atomic layer
deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis …

Dy3+-doped gallium oxide hydroxides (GaOOH: Dy3+) with various morphologies
(submicrospindles, submicroellipsoids, 3D hierarchical microspheres) were synthesized by …

Micro-to nano-sized GaOOH nanorods and particles were prepared under varying
hydrothermal conditions without any surfactant and additive using gallium nitrate and …