Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

The importance of stress and strain effects on surface physics are reviewed. For this purpose
the following points are developed.(1) The elastic, thermodynamics and atomistic definitions …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

Silicon spin qubits stand out due to their very long coherence times, compatibility with
industrial fabrication, and prospect to integrate classical control electronics. To achieve a …

The properties of steps in thermal equilibrium are described in the context of prediction of
the stability and evolution of nanostructures on surfaces. Experimental techniques for …

A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

Although germanium (Ge)(001) has a relatively small surface unit cell, this surface displays
a wealth of fascinating phenomena. The Ge (001) surface is a prototypical example of a …

The widely used 'silicon-on-insulator'(SOI) system consists of a layer of single-crystalline
silicon supported on a silicon dioxide substrate. When this silicon layer (the template layer) …

This is the first book to provide guidance on the development and application of metal
silicide technology as it emerges from the scientific to the prototype and manufacturing …