Challenges in materials and devices for resistive-switching-based neuromorphic computing
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …
components of a solid-state system, which emulates a biological brain. The tutorial is …
A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator
P Stoliar, J Tranchant, B Corraze… - Advanced Functional …, 2017 - Wiley Online Library
During the last half century, the tremendous development of computers based on von
Neumann architecture has led to the revolution of the information technology. However, von …
Neumann architecture has led to the revolution of the information technology. However, von …
Memristive computing devices and applications
Advances in electronics have revolutionized the way people work, play and communicate
with each other. Historically, these advances were mainly driven by CMOS transistor scaling …
with each other. Historically, these advances were mainly driven by CMOS transistor scaling …
Neuromorphic computing with memristive devices
Technology advances in the last a few decades have resulted in profound changes in our
society, from workplaces to living rooms to how we socialize with each other. These changes …
society, from workplaces to living rooms to how we socialize with each other. These changes …
Non-thermal resistive switching in Mott insulator nanowires
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which
triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT …
triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT …
Resistive switching in Mott insulators and correlated systems
Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …
memories, based on an electrically driven resistive switching (RS) of an active material. This …
Direct Observation of the Electrically Triggered Insulator-Metal Transition in Far below the Transition Temperature
Resistive switching is of the key phenomena for applications such as nonvolatile memories
or neuromorphic computing. V 3 O 5, a compound of the vanadium oxide Magnéli series, is …
or neuromorphic computing. V 3 O 5, a compound of the vanadium oxide Magnéli series, is …
Exponential escape rate of filamentary incubation in Mott spiking neurons
Mott materials such as vanadium oxides, when subject to a strong applied voltage, present
an inhomogeneous insulator-to-metal transition with formation of metallic filaments within …
an inhomogeneous insulator-to-metal transition with formation of metallic filaments within …
Transverse barrier formation by electrical triggering of a metal-to-insulator transition
Application of an electric stimulus to a material with a metal-insulator transition can trigger a
large resistance change. Resistive switching from an insulating into a metallic phase, which …
large resistance change. Resistive switching from an insulating into a metallic phase, which …
Dynamics of the electrically induced insulator-to-metal transition in rare-earth nickelates
Rare-earth nickelates feature an insulator-to-metal transition (IMT) that can be electrically
triggered. We study the dynamics of this electrically induced transition by comparing the time …
triggered. We study the dynamics of this electrically induced transition by comparing the time …