The elucidation of the effects of structurally extended defects on electronic properties of
materials is especially important in view of the current advances in electronic device …

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum-dot lasers are
achieved by the application of an annealing and growth interruption step at 600° C after the …

Reversible antiferroelectric‐ferroelectric phase transitions were recently observed in a
series of SrSnO3‐modified NaNbO3 lead‐free antiferroelectric materials, exhibiting well …

GaN cap layers with thicknesses between 0.6 and 2.4 nm were shown to effectively
suppress the degradation of the structural and electrical properties of AlGaN/GaN high …

InAs layers were elaborated on semi-insulating GaAs (100) substrates in a horizontal
atmospheric pressure MOVPE reactor at a temperature of 450° C. The growth process was …

Electronic properties of strain-induced dislocations in partially relaxed InGaAs/GaAs
heterostructures with a small lattice mismatch have been studied by means of deep-level …

Reliability is related to all levels of an application, from component or device level to system
or environment level. Even though all these levels are linked and interact with each other …

It is demonstrated that relaxation of GaAs/In x Ga 1− x As/GaAs strained-layer
heterostructures can be brought about by postfabrication thermal processing. Misfit …

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial
structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that …

Dislocation structures are presented for GaAs/In x Ga 1− x As/GaAs heterostructures before
and after thermal processing. Cathodoluminescence has allowed nondestructive …