Titanium dioxide nanomaterials: self-structural modifications
L Liu, X Chen - Chemical reviews, 2014 - ACS Publications
Titanium dioxide (TiO2), white color, with a high brightness and refractive index, has been
widely used as a white pigment since its commercial production in the 1920s. 1 Its low cost …
widely used as a white pigment since its commercial production in the 1920s. 1 Its low cost …
Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …
electric currents in the presence of electric fields or carrier concentration gradients. These …
[書籍][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Thermal conductivity of aluminum scandium nitride for 5G mobile applications and beyond
Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1–x Sc x N are
replacing AlN-based devices because of their higher achievable bandwidths, suitable for the …
replacing AlN-based devices because of their higher achievable bandwidths, suitable for the …
[書籍][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Design, fabrication, and characterization of scandium aluminum nitride-based piezoelectric micromachined ultrasonic transducers
This paper presents the design, fabrication, and characterization of piezoelectric
micromachined ultrasound transducers (PMUTs) based on scandium aluminum nitride (Sc x …
micromachined ultrasound transducers (PMUTs) based on scandium aluminum nitride (Sc x …
Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy
PG Baranov, AP Bundakova, AA Soltamova… - Physical Review B …, 2011 - APS
Results of experiments are presented that suggest that the Si vacancy in SiC is a promising
quantum system for single-defect and single-photon spectroscopy in the infrared region. The …
quantum system for single-defect and single-photon spectroscopy in the infrared region. The …
Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
Several systems in the solid state have been suggested as promising candidates for spin-
based quantum information processing. In spite of significant progress during the last …
based quantum information processing. In spite of significant progress during the last …