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III-nitride semiconductors for intersubband optoelectronics: a review
III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
X-ray diffraction of III-nitrides
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have
revolutionized a myriad of electronic and photonic devices and applications, including …
revolutionized a myriad of electronic and photonic devices and applications, including …
Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
In this work we investigate the electronic and optical properties of self-assembled quantum
dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated …
dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated …
Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
We report on the controlled growth by molecular beam epitaxy of 20-period Si-doped Ga
N∕ Al N quantum dot (QD) superlattices, in order to tailor their intraband absorption within …
N∕ Al N quantum dot (QD) superlattices, in order to tailor their intraband absorption within …
Strain distribution in GaN∕ AlN quantum-dot superlattices
The two-dimensional strain distribution in a Ga N∕ Al N quantum-dot (QD) superlattice is
measured from high-resolution transmission electron microscopy images using the …
measured from high-resolution transmission electron microscopy images using the …
Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths
We report the Stranski–Krastanov growth of Si-doped GaN∕ AlN quantum dot superlattices
displaying conduction-band interlevel absorption at telecommunication wavelengths. By …
displaying conduction-band interlevel absorption at telecommunication wavelengths. By …
Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
We report on the identification of an optimum deposited amount of AlGaN in AlGaN/AlN
quantum dot (QD) superlattices grown by molecular-beam epitaxy, which grants maximum …
quantum dot (QD) superlattices grown by molecular-beam epitaxy, which grants maximum …
InGaN quantum dots studied by correlative microscopy techniques for enhanced light-emitting diodes
InGaN/GaN nanostructures form the active region of III-nitride emitters (light emitting diodes,
laser diodes, single photon emitters) in the visible spectral range. In order to understand the …
laser diodes, single photon emitters) in the visible spectral range. In order to understand the …
[HTML][HTML] Multiscale Kinetic Monte Carlo Simulation of Self-Organized Growth of GaN/AlN Quantum Dots
JA Budagosky, A García-Cristóbal - Nanomaterials, 2022 - mdpi.com
A three-dimensional kinetic Monte Carlo methodology is developed to study the strained
epitaxial growth of wurtzite GaN/AlN quantum dots. It describes the kinetics of effective GaN …
epitaxial growth of wurtzite GaN/AlN quantum dots. It describes the kinetics of effective GaN …