[HTML][HTML] Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials
In this work, the influence of two-dimensional state density on oscillations of transverse
electrical conductivity in heterostructures with rectangular quantum wells is investigated. A …
electrical conductivity in heterostructures with rectangular quantum wells is investigated. A …
Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells
In this work, the influence of two-dimensional state density on oscillations of transverse
electrical conductivity in heterostructures with rectangular quantum wells is investigated. A …
electrical conductivity in heterostructures with rectangular quantum wells is investigated. A …
Oscillations of transverse magnetoresistance in the conduction band of quantum wells at different temperatures and magnetic fields
In this work, the influence of two-dimensional state density on oscillations of transverse
electrical conductivity in heterostructures with rectangular quantum wells is investigated. A …
electrical conductivity in heterostructures with rectangular quantum wells is investigated. A …
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and …
We investigate electronic transport properties of as-grown and annealed n-type modulation-
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
Effect of do** on transport properties of InSb epilayers grown by MOCVD and MBE
Temperature-dependent carrier transport properties of two InSb epilayers grown on GaAs
substrates by Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition …
substrates by Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition …
The effect of barrier layers on 2D electron effective mass in Al0. 3Ga0. 7N/AlN/GaN heterostructures
Abstract The Shubnikov de Haas (SdH) effect measurements have been performed to
evaluate the influence of Si 3 N 4 passivation, a spacer layer, and Si-doped barrier layer on …
evaluate the influence of Si 3 N 4 passivation, a spacer layer, and Si-doped barrier layer on …
Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer
The effect of Bi incorporation into In x Ga 1-x As lattice on the nanosecond pulsed electric
field dependence of the drift velocity of electrons in n-type In x Ga 1-x As 1-y Bi y alloys with …
field dependence of the drift velocity of electrons in n-type In x Ga 1-x As 1-y Bi y alloys with …
Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures
Temperature and nitrogen dependence of 2D carrier mobility in as-grown and annealed Ga
1− x In x N y As 1− y/GaAs quantum well (QW) structures (x= 0.32; y= 0, 0.009, and 0.012) …
1− x In x N y As 1− y/GaAs quantum well (QW) structures (x= 0.32; y= 0, 0.009, and 0.012) …
Quantum oscillations and interference effects in strained n-and p-type modulation doped GaInNAs/GaAs quantum wells
We have performed magnetoresistance measurements on n-and p-type modulation doped
GaInNAs/GaAs quantum well (QW) structures in both the weak (B< 0.08 T) and the high …
GaInNAs/GaAs quantum well (QW) structures in both the weak (B< 0.08 T) and the high …
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
We report on the power loss mechanisms of hot electrons in as-grown and annealed n-type
modulation-doped Al 0.15 Ga 0.85 As/GaAs 1-x Bi x (x= 0 and 0.04) quantum well structures …
modulation-doped Al 0.15 Ga 0.85 As/GaAs 1-x Bi x (x= 0 and 0.04) quantum well structures …