Room-temperature compound semiconductor radiation detectors

DS McGregor, H Hermon - Nuclear Instruments and Methods in Physics …, 1997 - Elsevier
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Performance of a new ohmic contact for GaAs particle detectors

M Alietti, C Canali, A Castaldini, A Cavallini… - Nuclear Instruments and …, 1995 - Elsevier
In recent papers, we have investigated, within the context of the RD-8 experiment, the
behaviour as a function of bias of the active region of particle detectors made by Alenia SpA …

Optical pump–terahertz probe study of HR GaAs: Cr and SI GaAs: EL2 structures with long charge carrier lifetimes

IA Kolesnikova, DA Kobtsev, RA Redkin, VI Voevodin… - Photonics, 2021 - mdpi.com
The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs: EL2
(semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs: Cr (high …

Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector …

M Rogalla, K Runge - Nuclear Instruments and Methods in Physics …, 1999 - Elsevier
A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI)
GaAs particle detectors is developed. The model is based on a field-enhanced electron …

[PDF][PDF] Electric field dependent EL2 capture coefficient in semi-insulating GaAs obtained from propagating high field domains

F Piazza, PCM Christianen, JC Maan - 1996 - repository.ubn.ru.nl
We have determined the electric field dependence of the carrier capture coefficient of the
EL2 traps in semi-insulating GaAs up to 7 kV/cm by means of the quantitative analysis of …

Space charge formation in chromium compensated GaAs radiation detectors

E Belas, R Grill, J Pipek, P Praus, J Bok… - Journal of Physics D …, 2020 - iopscience.iop.org
Abstract Space charge formation in chromium-compensated GaAs sensors is investigated
by the laser-induced transient current technique applying pulsed and DC bias. Formation of …

An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes

A Cola, L Reggiani, L Vasanelli - Semiconductor science and …, 1997 - iopscience.iop.org
We present an extended drift-diffusion modelling to study electron transport in semi-
insulating n-GaAs Schottky-barrier diodes. The model accounts for hot-carrier dynamics and …

Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation

G Kavaliauskienė, V Kažukauskas, V Rinkevičius… - Applied Physics A, 1999 - Springer
We report the investigation of the non-irradiated and irradiated-with-pions Schottky diodes
made on semi-insulating GaAs. Thermally stimulated currents have been measured …

Analysis of the active layer in SI GaAs Schottky diodes

A Castaldini, A Cavallini, L Polenta, C Canali… - Nuclear Instruments and …, 1998 - Elsevier
The behavior of the active region width W of semi-insulating gallium arsenide Schottky
diodes versus reverse biasing has been investigated by optical beam induced current and …