Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
The distribution of alloyed atoms in semiconductors often deviates from a random
distribution which can have significant effects on the properties of the materials. In this study …
distribution which can have significant effects on the properties of the materials. In this study …
Photovoltaic performance improvement of GaAs1-xBix nanowire solar cells in terms of light trap** capability and efficiency
This paper investigates optoelectronic performance of nanowire (NW) solar cells using GaAs
and its alloy GaAs 1-x Bi x for three different mole fractions of Bi eg, x= 0.01, 0.043, 0.078 …
and its alloy GaAs 1-x Bi x for three different mole fractions of Bi eg, x= 0.01, 0.043, 0.078 …
Molecular Beam Epitaxy of InAsSbBi Lattice-Matched to InSb toward Long-Wave Infrared Sensing
InSb-based dilute-bismide alloys present a unique opportunity to span the entirety of the
long-wave infrared with a bulk, lattice-matched III–V alloy that boasts greatly reduced toxicity …
long-wave infrared with a bulk, lattice-matched III–V alloy that boasts greatly reduced toxicity …
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Alloys
The search for semiconducting materials with improved optical properties relies on the
possibility to manipulate the semiconductors band structure by using quantum confinement …
possibility to manipulate the semiconductors band structure by using quantum confinement …
[HTML][HTML] Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys
T Paulauskas, B Čechavičius, V Karpus… - Journal of Applied …, 2020 - pubs.aip.org
The GaAs 1–x Bi x semiconductor alloy allows one to achieve large bandgap reduction and
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
Investigation of carrier localization in InAs/AlSb type-II superlattice material system
We investigate carrier localization in the InAs/AlSb type-II superlattice (T2SL) material
system using temperature-and excitation power (I ex)-dependent photoluminescence (PL) …
system using temperature-and excitation power (I ex)-dependent photoluminescence (PL) …
Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
Band-tail states in semiconductors reflect the effects of material growth and/or treatment,
affect the performance of optoelectronic applications, and are hence a well-concerned issue …
affect the performance of optoelectronic applications, and are hence a well-concerned issue …
GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization
The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers
interested in its fundamental properties and the potential for infrared optoelectronics …
interested in its fundamental properties and the potential for infrared optoelectronics …
[HTML][HTML] Map** the composition-dependence of the energy bandgap of GaAsNBi alloys
We have examined the alloy composition dependence of the energy bandgap and
electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions …
electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions …
Design of hybrid solar cell with GaAs1− xBix (x= 0.01) nanowire core and conformally coated P3HT/ITO shell
The optoelectronic characteristics of the vertically aligned conformally coated radial junction,
core–shell nanowire (NW) hybrid solar cell (HSC) having a core active layer of GaAs 0.99 Bi …
core–shell nanowire (NW) hybrid solar cell (HSC) having a core active layer of GaAs 0.99 Bi …