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Influence of the electron blocking layer on defect state density and ultraviolet luminescence performance of the p-NiO/i-Ga2O3/n-GaN heterojunction
Y Zhao, B Ding, Y Liu, X Zhang, G **ang, Z Yue… - Available at SSRN … - papers.ssrn.com
Improving the efficiency of GaN-based light-emitting diodes (LEDs) had been a lifelong goal
for researchers, with optimizing interfacial defects being a critical aspect of this pursuit. Here …
for researchers, with optimizing interfacial defects being a critical aspect of this pursuit. Here …