III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …

In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …

The influence of a GaAsSb cap** layer on the structural properties of self-assembled
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …

The excitation power dependence of the ground and excited state transitions in type-II In As-
Ga As 0.78 Sb 0.22 quantum dot structure has been studied. Both transitions exhibit a strong …

We present a theoretical study of the electronic and excitonic states in InAs/GaAsSb
quantum dots. We first center our study on the dependence of the antimony composition in …

The study investigated the impact of introducing bismuth into the GaAs cap** layer (CL)
on InAs quantum dots (QDs) to enhance their QD properties. Three different time …

We report a combined experimental and theoretical analysis of Sb and In segregation during
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …

Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots
(QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is …