It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs),
which are one of the basic building blocks of solid state UV optoelectronic devices. In the …

A solar-blind photodetector based on β-Ga2O3/NSTO (NSTO= Nb: SrTiO3) heterojunctions
were fabricated for the first time, and its photoelectric properties were investigated. The …

Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-
Ga_2O_3) on (0001) sapphire substrates. After optimizing the growth parameters,(2¯ 01) …

A “visible-blind” solution-processed UV photodetector is realized on the basis of colloidal
ZnO nanoparticles. The devices exhibit low dark currents with a resistance> 1 TΩ and high …

The effect of using bilayer film on the efficiency of dye sensitized solar cells is investigated.
ZnO, TiO 2 and bilayer ZnO/TiO 2 (ZTO) based cells are developed and sensitized with five …

To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain
the advantages of inkjet printing technology, the inkjet printing Ag nanoparticles (NPs) were …

In the present paper, ZnO nanoparticles (NPs) with particle size of 20–50 nm have been
synthesized by hydrothermal method. UV-visible absorption spectra of ZnO nanoparticles …

As a wide-bandgap semiconductor oxide material, Ga 2 O 3 has great application prospects
in various optoelectronic fields. At present, much attention has been paid to Ga 2 O 3 deep …

We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an
enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and the …

In this study, poly (2-ethylhexyl acrylate)(PEHA) homopolymer and its copolymer combined
with acrylic acid P (EHA-co-AA) were employed as interfaces in two separate Schottky …