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Growth and self-organization of SiGe nanostructures
Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …
development of strain induced nanodevices and bandgap engineering, in particular …
Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Structural and optical properties of InGaN/GaN nanowire heterostructures grown byPA-MBE
The structural and optical properties of InGaN/GaN nanowire heterostructures grown by
plasma-assisted molecular beam epitaxy have been studied using a combination of …
plasma-assisted molecular beam epitaxy have been studied using a combination of …
Enhanced telecom emission from single group-IV quantum dots by precise CMOS-compatible positioning in photonic crystal cavities
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates
We identify the most important parameters for the growth of ordered SiGe islands on pit-
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
[HTML][HTML] Thermodynamic theory of growth of nanostructures
XL Li, CX Wang, GW Yang - Progress in Materials Science, 2014 - Elsevier
Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …
nanowires (NWs), have been extensively studied because of their physical properties and …
Growth mechanism and properties of InGaN insertions in GaN nanowires
We demonstrate the strong influence of strain on the morphology and In content of InGaN
insertions in GaN nanowires, in agreement with theoretical predictions which establish that …
insertions in GaN nanowires, in agreement with theoretical predictions which establish that …
[HTML][HTML] Light emission from ion-implanted SiGe quantum dots grown on Si substrates
We report on electroluminescence spectroscopy experiments demonstrating room-
temperature light emission from heavily alloyed SiGe quantum dots, for which the light …
temperature light emission from heavily alloyed SiGe quantum dots, for which the light …
Compositional map** of semiconductor quantum dots and rings
In this article we review the extensive experimental work on the compositional map** of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
Dislocation-free Ge nano-crystals via pattern independent selective Ge heteroepitaxy on Si nano-tip wafers
The integration of dislocation-free Ge nano-islands was realized via selective molecular
beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular …
beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular …