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Review on III–V semiconductor nanowire array infrared photodetectors
In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …
photodetector applications due to their direct and suitable bandgap, unique optical and …
Semiconductor nanowires: to grow or not to grow?
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …
electronics industry for more than half a century. However, cubic silicon (Si), germanium …
Room-temperature near-infrared high-Q perovskite whispering-gallery planar nanolasers
Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true
integration of optoelectronic circuitry. 1 Although significant progress has been made in III–V …
integration of optoelectronic circuitry. 1 Although significant progress has been made in III–V …
Optically pumped room-temperature GaAs nanowire lasers
Near-infrared lasers are important for optical data communication, spectroscopy and
medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of …
medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of …
Towards high efficiency nanowire solar cells
Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …
solar cell applications. In this article we review the development of the field with a special …
Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with
diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase …
diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase …
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
B Mayer, D Rudolph, J Schnell, S Morkötter… - Nature …, 2013 - nature.com
Semiconductor nanowires are widely considered to be the next frontier in the drive towards
ultra-small, highly efficient coherent light sources. While NW lasers in the visible and …
ultra-small, highly efficient coherent light sources. While NW lasers in the visible and …
[HTML][HTML] Review on III-V semiconductor single nanowire-based room temperature infrared photodetectors
Recently, III-V semiconductor nanowires have been widely explored as promising
candidates for high-performance photodetectors due to their one-dimensional morphology …
candidates for high-performance photodetectors due to their one-dimensional morphology …
Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage
Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic
engineering by nanowire tapering allows for high solar light absorption. In combination with …
engineering by nanowire tapering allows for high solar light absorption. In combination with …