2D transition metal dichalcogenides

S Manzeli, D Ovchinnikov, D Pasquier… - Nature Reviews …, 2017 - nature.com
Graphene is very popular because of its many fascinating properties, but its lack of an
electronic bandgap has stimulated the search for 2D materials with semiconducting …

Mechanics of freely‐suspended ultrathin layered materials

A Castellanos‐Gomez, V Singh… - Annalen der …, 2015 - Wiley Online Library
The study of atomically thin two‐dimensional materials is a young and rapidly growing field.
In the past years, a great advance in the study of the remarkable electrical and optical …

Orbital analysis of electronic structure and phonon dispersion in MoS, MoSe, WS, and WSe monolayers under strain

CH Chang, X Fan, SH Lin, JL Kuo - Physical Review B—Condensed Matter …, 2013 - APS
Structures, electronic properties, and phonon dispersions of monolayer MX 2 (M= Mo, W; X=
S, Se) under various types of mechanical strains are investigated with density functional …

Ultrafast laser spectroscopy of two‐dimensional materials beyond graphene

F Ceballos, H Zhao - Advanced Functional Materials, 2017 - Wiley Online Library
Starting with the discovery of graphene in 2004, the interest in two‐dimensional materials
since then has been exponentially growing. Across many disciplines, their exceptional …

Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain

S Yu, HD **ong, K Eshun, H Yuan, Q Li - Applied Surface Science, 2015 - Elsevier
We report a computational study on the impact of tensile strain on MoS 2 monolayer. The
transition between direct and indirect bandgap structure and the transition between …

van der Waals trilayers and superlattices: modification of electronic structures of MoS 2 by intercalation

N Lu, H Guo, L Wang, X Wu, XC Zeng - Nanoscale, 2014 - pubs.rsc.org
We perform a comprehensive first-principles study of the electronic properties of van der
Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML= BN, MoSe2 …

Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

HV Phuc, NN Hieu, BD Hoi, NV Hieu, TV Thu… - Journal of Electronic …, 2018 - Springer
In this paper, we studied the electronic properties, effective masses, and carrier mobility of
monolayer MoS _2 MoS 2 using density functional theory calculations. The carrier mobility …

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

A Varghese, AH Pandey, P Sharma, Y Yin… - Nano Letters, 2024 - ACS Publications
Strain can modulate bandgap and carrier mobilities in two-dimensional (2D) materials.
Conventional strain-application methodologies relying on flexible/patterned/nanoindented …

[КНИГА][B] 2D materials for nanoelectronics

M Houssa, A Dimoulas, A Molle - 2016 - books.google.com
This book is the first to present comprehensive, state-of-the-art coverage of 2D materials and
their nanoelectronic applications. Comprised of chapters authored by world-renowned …

Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

N Ghobadi, M Hosseini… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
The electronic properties of a field-effect transistor with two different structures of MoSi 2 N 4
and WSi 2 N 4 monolayers as the channel material in the presence of biaxial strain are …