Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in
different modifications (polytypes). Having the same chemical nature, SiC polytypes may …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

The phenomenon of recombination-induced stacking faults in high-voltage pn diodes in SiC
has been previously shown to increase the forward voltage drop due to reduction of minority …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

We present a review of the current status of research into new semiconductor materials for
use as particle tracking detectors in very high radiation environments. This work is carried …

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane
dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the …

We report on optically induced nucleation and expansion of stacking faults in hexagonal SiC
structures. The activation energy for partial dislocation glide under optical excitation is found …

We investigated the relationship between the dislocation velocity and the injected carrier
concentration on the expansion of single Shockley-type stacking faults by monitoring the …

The paths of basal plane dislocations (BPDs) through 4 H-SiC epitaxial layers grown on
wafers with an 8 offcut were tracked using ultraviolet photoluminescence imaging. The …