<? Pub Dtl=""?> The total ionizing dose (TID) response of bulk FinFETs is investigated for
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …

Future universal quantum computers solving problems of practical relevance are expected
to require at least 10 6 qubits, which is a massive scale-up from the present numbers of less …

We propose a model, validated with simulations, describing how band-to-band tunneling
(BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices …

Bulk and silicon-on-insulator (SOI) n-channel FinFETs with fin widths of 15-40 nm and
channel lengths of 45 and 1000 nm were irradiated with 1.8 MeV protons at temperatures of …

A model for inversion in trench isolation is developed using an analytical model to calculate
the surface charge density along the trench sidewall. The model shows that the inversion …

We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe
HBTs. The approach is based on the inclusion of an alternate reverse-biased pn junction (n …

We have performed time-domain reflectometry (TDR) measurements on nMOSFETs before
and after irradiation on time scales relevant to MOS radio-frequency response. The …

Compact modeling of inter-device radiation-induced leakage underneath the gateless thick
STI oxide is presented and validated taking into account CMOS technology and hardness …

Dose-rate effects are studied in shallow trench isolation regions. Increased damage is
observed at low dose rate, with a different dose dependence compared to tests done at high …

The performance of the ultra-thin body and buried oxide fully-depleted silicon-on-insulator
metal-oxide-semiconductor field-effect-transistors based on a 22 nm technology node is …