Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

Understanding the mechanisms which determine the band offsets and Schottky barriers at
semiconductor contacts and engineering them for specific device applications are important …

A systematic theoretical study of the electronic properties of pseudomorphic (100)-strained
Si 1− x Ge x alloys grown on unstrained Si 1− y Ge y substrates is presented. Based on …

A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …

Ab initio electronic structure studies of prototypical polar interfaces of wurtzite III-V nitrides
show that large uniform electric fields exist in epitaxial nitride overlayers, due to the …

We discuss a model for the onsite matrix elements of the sp 3 d 5 s∗ tight-binding
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …

The hole mobility of p-type strained Si metal-oxide-semiconductor field-effect transistors
(MOSFET's) fabricated on a SiGe substrate is investigated theoretically and compared with …

We present a novel method for the calculation of the static and electronic dielectric tensor of
polar insulating crystals based on concepts from the modern theory of dielectric polarization …

Based on recent advances in first-principles theory, we develop a general model of the band
offset at metal/ferroelectric interfaces. We show that, depending on the polarization of the …

This paper is based on a comprehensive review of the literature and our own studies. We
present a summary of the theoretical models and related empirical expressions to evaluate …