Advances in metal halide perovskite semiconductors for optoelectronic devices have revived
research interest in their applicability in transistors. Despite initial challenges affecting …

For a couple of decades, there is a tremendous growth in industries and technology in the
global level. Unfortunately, emerging new industries became a main reason for rising air …

Tin halide perovskites have the general chemical formula ASnX3, where A is a monovalent
cation and X is a monovalent halide anion. These semiconducting materials can be used to …

Mixed-halide perovskites enable precise spectral tuning across the entire spectral range
through composition engineering. However, mixed halide perovskites are susceptible to ion …

Investigation of the inherent field-driven charge transport behaviour of three-dimensional
lead halide perovskites has largely remained challenging, owing to undesirable ionic …

Neuromorphic computing requires electronic systems that can perform massively parallel
computational tasks with low energy consumption. Such systems have traditionally been …

Electronic devices based on tin halide perovskites often exhibit a poor operational stability.
Here, we report an additive engineering strategy to realize high-performance and stable …

Solution‐processed metal halide perovskites hold immense potential for the advancement of
next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based …

Abstract Two‐dimensional (2D) tin (Sn)‐based perovskites have recently received
increasing research attention for perovskite transistor application. Although some progress …

Metal halide perovskites are considered next-generation semiconductors for various
optoelectronic devices owing to their low-cost processability and superior optoelectronic …