Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
L Sang - Functional Diamond, 2022 - Taylor & Francis
With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …
converters, the heat dissipation in the devices becomes the key issue toward the real …
Diamond power devices: state of the art, modelling, figures of merit and future perspective
With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …
[HTML][HTML] Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding
Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga 2 O
3 layers were fabricated at a low temperature using a direct-bonding technique. We have …
3 layers were fabricated at a low temperature using a direct-bonding technique. We have …
Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond pn junction diode
CX Wang, GW Yang, HW Liu, YH Han, JF Luo… - Applied Physics …, 2004 - pubs.aip.org
High-quality heterojunctions between p-type diamond single-crystalline films and highly
oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal …
oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal …
Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors
III-nitrides are intriguing materials with the potential to be used in various interdisciplinary
applications, including high-power optoelectronics, energy conversion, green technologies …
applications, including high-power optoelectronics, energy conversion, green technologies …
Conventional n-type do** in diamond: state of the art and recent progress
M Nesladek - Semiconductor Science and Technology, 2005 - iopscience.iop.org
Recent progress in chemical vapour deposition (CVD) diamond technology has enabled the
preparation of high-quality n-type CVD diamond layers using phosphorus as a dopant. CVD …
preparation of high-quality n-type CVD diamond layers using phosphorus as a dopant. CVD …
Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations
Q-carbon, a quenched form of carbon, is a recently discovered carbon structure that has
tremendous properties, compatibility, and potential for use in device fabrication and other …
tremendous properties, compatibility, and potential for use in device fabrication and other …