Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
Progress in indium gallium nitride materials for solar photovoltaic energy conversion
DVP McLaughlin, JM Pearce - Metallurgical and Materials Transactions A, 2013 - Springer
The world requires inexpensive, reliable, and sustainable energy sources. Solar
photovoltaic (PV) technology, which converts sunlight directly into electricity, is an …
photovoltaic (PV) technology, which converts sunlight directly into electricity, is an …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
[HTML][HTML] Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41
Wurtzite Al 1− x Sc x N thin films with scandium Sc concentrations up to x= 0.41 were
prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between …
prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between …
Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
We present a theory of local electric polarization in crystalline solids and apply it to study the
case of wurtzite group-III nitrides. We show that a local value of the electric polarization …
case of wurtzite group-III nitrides. We show that a local value of the electric polarization …
Efficient approach to solve the Bethe-Salpeter equation for excitonic bound states
Excitonic effects in optical spectra and electron-hole pair excitations are described by
solutions of the Bethe-Salpeter equation (BSE) that accounts for the Coulomb interaction of …
solutions of the Bethe-Salpeter equation (BSE) that accounts for the Coulomb interaction of …
Anisotropic absorption and emission of bulk AlN
The intrinsic anisotropic optical properties of wurtzite AlN are investigated in absorption and
emission. Full access to the anisotropy of the optical response of the hexagonal material is …
emission. Full access to the anisotropy of the optical response of the hexagonal material is …
[LIVRE][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E Sakalauskas, H Behmenburg, C Hums… - Journal of Physics D …, 2010 - iopscience.iop.org
A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
Optical properties of InGaN thin films in the entire composition range
SA Kazazis, E Papadomanolaki… - Journal of Applied …, 2018 - pubs.aip.org
The optical properties of thick InGaN epilayers, with compositions spanning the entire
ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) …
ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) …