An overview on analyses and suppression methods of trap** effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
The evolution of manufacturing technology for GaN electronic devices
AC Liu, PT Tu, C Langpoklakpam, YW Huang… - Micromachines, 2021 - mdpi.com
GaN has been widely used to develop devices for high-power and high-frequency
applications owing to its higher breakdown voltage and high electron saturation velocity …
applications owing to its higher breakdown voltage and high electron saturation velocity …
High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
This article presents fully integrated power amplifiers (PAs) with eight-way low-loss power
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
GaN integrated circuit power amplifiers: Developments and prospects
R Nikandish - IEEE Journal of Microwaves, 2022 - ieeexplore.ieee.org
GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
Transition metal nitrides, namely group 3 (Sc and Y) elements alloyed with AlN, are
predicted to enhance several characteristics of wurtzite semiconducting nitrides, thanks to …
predicted to enhance several characteristics of wurtzite semiconducting nitrides, thanks to …
A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psat for Sub-THz Imaging System
J Zhang, T Wu, L Nie, S Ma, Y Chen, J Ren - IEEE Access, 2021 - ieeexplore.ieee.org
This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS
technology for a sub-terahertz frequency modulated continuous wave imaging system. It …
technology for a sub-terahertz frequency modulated continuous wave imaging system. It …
A 200mW D-band Power Amplifier with 17.8% PAE in 250-nm InP HBT Technology
We report a compact and high efficiency D-band power amplifier in 250nm InP HBT
technology. A compact and low loss 8: 1 transmission line power combiner is demonstrated …
technology. A compact and low loss 8: 1 transmission line power combiner is demonstrated …
Sub-terahertz channel sounder: Review and future challenges
Due to the large amount of unused and unexplored spectrum resources, the so-called sub-
Terahertz (sub-THz) frequency bands from 100 to 300 GHz are seen as promising bands for …
Terahertz (sub-THz) frequency bands from 100 to 300 GHz are seen as promising bands for …
Limitations and implementation strategies of interstage matching in a 6-W, 28–38-GHz GaN power amplifier MMIC
In this article, we summarize the theoretical matching boundaries and show the limitations
they implicate for real-world amplifier design. Starting with a common schematic prototype …
they implicate for real-world amplifier design. Starting with a common schematic prototype …
A 190-210GHz Power Amplifier with 17.7-18.5 dBm Output Power and 6.9-8.5% PAE
We report a high-efficiency G-band power amplifier in 250nm InP HBT technology. The
amplifier has four capacitively linearized common base stages. Four power cells are …
amplifier has four capacitively linearized common base stages. Four power cells are …