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High‐speed and low‐energy nitride memristors
High‐performance memristors based on AlN films have been demonstrated, which exhibit
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …
Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
Highly reproducible bipolar resistance switching was recently demonstrated in a composite
material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical …
material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical …
High on–off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing
Y Sun, X Yan, X Zheng, Y Liu, Y Zhao… - … applied materials & …, 2015 - ACS Publications
In this work, a high-performance, forming-free memristor based on Au/ZnO nanorods/AZO
(Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen …
(Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen …
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power …
In this letter, a bipolar resistive-switching random-access memory (RRAM) in Ni/Si 3 N 4/SiO
2/p+-Si structure and its fabrication process are demonstrated. The proposed device with …
2/p+-Si structure and its fabrication process are demonstrated. The proposed device with …
a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths
X Jiang, Z Ma, J Xu, K Chen, L Xu, W Li, X Huang… - Scientific Reports, 2015 - nature.com
The realization of ultra-low power Si-based resistive switching memory technology will be a
milestone in the development of next generation non-volatile memory. Here we show that a …
milestone in the development of next generation non-volatile memory. Here we show that a …
Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices
The authors report upon the ultrafast bipolar switching characteristics observed in aluminum
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …
Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices
Oxides-based resistive switching memory induced by oxygen ions migration is attractive for
future nonvolatile memories. Numerous works had focused their attentions on the …
future nonvolatile memories. Numerous works had focused their attentions on the …
Memory Properties of SiOx- and SiNx-Based Memristors
VA Gritsenko, AA Gismatulin, OM Orlov - Nanobiotechnology Reports, 2021 - Springer
Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices.
The memory properties of SiO x-and SiN x-based memristors obtained by plasma-enhanced …
The memory properties of SiO x-and SiN x-based memristors obtained by plasma-enhanced …
Transparent resistive switching memory using ITO/AlN/ITO capacitors
This letter covers the fabrication of a transparent resistive random access memory (T-
ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching …
ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching …
Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …