Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …

Controlling the crystallographic phase purity of III− V nanowires is notoriously difficult, yet
this is essential for future nanowire devices. Reported methods for controlling nanowire …

In this work we investigate the variation of the crystal structure of gold-seeded III–V
nanowires with growth parameters, in order to gain a cohesive understanding of these …

Aberration corrected scanning transmission electron microscopy (STEM) with high angle
annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) …

III–V antimonide nanowires are among the most interesting semiconductors for transport
physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal …

We determine the detailed differences in geometry and band structure between wurtzite
(Wz) and zinc blende (Zb) InAs nanowire (NW) surfaces using scanning tunneling …

Many semiconductor materials, including CdS, exist in multiple crystal phases such as
wurtzite and zinc blende, making it challenging to selectively grow one phase over another …

We report the first experiments carried out on a new imaging setup, which combines the high
spatial resolution of a photoemission electron microscope (PEEM) with the temporal …

Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry
and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite …