High-brightness 808 nm semiconductor laser diode packaged by SiC heat sink
X Li, K Jiang, Z Zhu, J Su, W **a, X Xu - Journal of Modern Optics, 2020 - Taylor & Francis
In order to further improve the reliability of high-power output of high-brightness
semiconductor lasers, 808 nm semiconductor laser chips with a stripe width of 100 µm were …
semiconductor lasers, 808 nm semiconductor laser chips with a stripe width of 100 µm were …
In vivo near-infrared fluorescence three-dimensional positioning system with binocular stereovision
B Song, W **, Y Wang, Q **… - Journal of Biomedical …, 2014 - spiedigitallibrary.org
Fluorescence is a powerful tool for in-vivo imaging in living animals. The traditional in-vivo
fluorescence imaging equipment is based on single-view two-dimensional imaging systems …
fluorescence imaging equipment is based on single-view two-dimensional imaging systems …
[PDF][PDF] 13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity
J Li, S Lin, T Liu, J Li, J Deng, J Han, B Cui - Chinese Optics Letters, 2014 - researching.cn
An asymmetric large optical cavity (LOC) waveguide is designed to raise the output power of
the 940 nm laser diode. By optimizing the metal organic chemical vapor deposition growth …
the 940 nm laser diode. By optimizing the metal organic chemical vapor deposition growth …
[PDF][PDF] 基于微透镜阵列匀束的激光二极管面阵抽运耦合系统分析
严雄伟， 王振国， 蒋新颖， 郑建刚， **敏， 荆玉峰 - 物理学报, 2018 - wulixb.iphy.ac.cn
为了提升高功率固体激光器中激光二极管(LD) 面阵抽运场性能, 采用几何光学和数理统计分析
的方法, 建立了基于微透镜阵列匀束的LD 面阵抽运耦合系统的数学与物理模型 …
的方法, 建立了基于微透镜阵列匀束的LD 面阵抽运耦合系统的数学与物理模型 …
[CITAS][C] 13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity
**建军， 林盛杰， 刘涛， **佳莼， 邓军， **军， 崔碧峰 - **光学快报: 英文版, 2014