This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …

Organic‐inorganic halide perovskites (OHPs) have been intensively studied for application
in solar cells with high conversion efficiency exceeding 22%. The unique electrical and …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Ion migration, which can be classified into cation migration and anion migration, is at the
heart of redox-based resistive random access memory. However, the coexistence of these …

We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO
as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by …

The existence of the memristor, as a fourth fundamental circuit element, by researchers at
Hewlett Packard (HP) labs in 2008, has attracted much interest since then. This occurs …

This study demonstrates the fabrication and characterization of chicken egg albumen-based
bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices …