Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …

Recent results on achieving ferromagnetism in transition-metal-doped GaN, AlN and related
materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of …

The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …

There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …

The III–V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have,
for some time now, been recognized as promising materials for novel electronic and …

Впервые в отечественной научно-технической литературе в объеме одной книги
детально рассмотрены теоретические основы, физические механизмы и принципы …

We report the first realization of molecular beam epitaxy (MBE) grown strained GaN
quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated …

We studied the influence of the growth temperature of AlN nucleation layer (T NL) on the AlN
template grown by high-temperature metal-organic chemical vapor deposition (HT-MOCVD) …

In this letter, we successfully achieved high-power radio frequency (RF) operation of
AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN …