Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

This part of the paper presents TCAD simulations of the InAs/Si lateral nanowire (NW) tunnel
FET (TFET) with the same geometry as the fabricated device discussed in the first part. In …

In this article, we introduce a novel vertical tunneling transistor that uses two germanium
source regions and a T-shaped silicon channel and investigate its performance for low …

In this paper, the analysis of SiGe source-based heterojunction Tunnel FET device is
reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source …

This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect
transistor. It comprises a dual do**-less tunneling junction that lies above an n+ drain …

In this article, a germanium source do**less tunnel field-effect transistor (TFET) is
presented, in which the cladding layer concept is employed to induce a hole layer in the …

In this paper, the workability of a Negative Capacitance (NC)-Double Gate (DG) Tunnel FET
(NC-DGTFET) for digital logic circuit implementation has been detailed. New analytical …

In this paper, we propose a novel junctionless tunnel field-effect transistor that uses a
tunneling gate and a modified auxiliary gate. The first one is employed to enhance the …

Junctionless transistor (JLT) which does not have a PN junction in the source-channel-drain
path, is reported to have a lower OFF-state current and therefore is more scalable to lower …

Dirac-source field-effect transistors (DS-FETs) have been proposed as steep-slope
transistors for low-power switching. The steep-slope switching of a DS-FET originates from …