Prospect of spin-orbitronic devices and their applications

Y Cao, G **ng, H Lin, N Zhang, H Zheng, K Wang - IScience, 2020 - cell.com
Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Z Zheng, Y Zhang, V Lopez-Dominguez… - Nature …, 2021 - nature.com
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient
manipulation of magnetic order in spintronic devices. To be deterministic, however …

Ultralow energy domain wall device for spin-based neuromorphic computing

D Kumar, HJ Chung, JP Chan, T **, ST Lim… - ACS …, 2023 - ACS Publications
Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to
achieve low-power intelligent devices. To realize NC, researchers investigate various types …

Field-free spin–orbit torque switching in L1-FePt single layer with tilted anisotropy

Y Tao, C Sun, W Li, L Yang, F **, Y Hui, H Li… - Applied Physics …, 2022 - pubs.aip.org
For real-world applications, it is desirable to realize field-free spin–orbit torque (SOT)
switching in thin films with high perpendicular magnetic anisotropy (PMA). In this paper, we …

Implementation of highly reliable and energy‐efficient nonvolatile in‐memory computing using multistate domain wall spin–orbit torque device

H Lin, N Xu, D Wang, L Liu, X Zhao… - Advanced Intelligent …, 2022 - Wiley Online Library
Emerging in‐memory computing (IMC) technology promises to tackle the memory wall
bottleneck in modern systems. Promoted as a promising building block, nonvolatile spin …

Field-free SOT-switching based on a vertical composition gradient of ferrimagnetic alloys

G Zeng, Y Wen, C Wu, C Ren, D Meng… - ACS Applied …, 2023 - ACS Publications
Reproducible field-free spin–orbit torque (SOT)-driven perpendicular magnetization
switching is essential for the development of ultralow-power spintronic devices. However …

Lack of simple correlation between switching current density and spin-orbit-torque efficiency of perpendicularly magnetized spin-current-generator–ferromagnet …

L Zhu, DC Ralph, RA Buhrman - Physical Review Applied, 2021 - APS
Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that, at
least for micrometer-sized samples, there is no simple correlation between the efficiency of …

[HTML][HTML] All-electrical control of compact SOT-MRAM: Toward highly efficient and reliable non-volatile in-memory computing

H Lin, X Luo, L Liu, D Wang, X Zhao, Z Wang, X Xue… - Micromachines, 2022 - mdpi.com
Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability,
controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics …

Investigation of spin–orbit torque switching mechanism in crystalline ferromagnetic semiconductor

AK Jana, S Lee - Applied Physics Letters, 2023 - pubs.aip.org
We investigated the spin–orbit torque (SOT) switching mechanism of a single layer of
crystalline diluted ferromagnetic semiconductor by simulating the current scan hysteresis …

Spin–Orbit Torque-Driven Memristor in L10 FePt Systems with Nanoscale-Thick Layers for Neuromorphic Computing

Y Tao, C Sun, W Li, C Wang, F **… - ACS Applied Nano …, 2023 - ACS Publications
In this study, a memristor driven by spin–orbit torque (SOT) is realized in the nanoscale
thickness L10 FePt systems with high perpendicular magnetization anisotropy (PMA). Due to …